Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
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چکیده
منابع مشابه
Photomodulated Reflectance Spectroscopy of GaAsBi/GaAs layers grown by MBE
The III-bismides are considered to be a very attractive set of III-V alloys due to their potential applications in photonic and spintronic devices. The incorporation of bismuth into GaAs, with its band anti-crossing effect in the valence band of GaAs, leads to a decrease in the temperature dependence of the bandgap. Such a material may be very useful in designing temperature-insensitive semicon...
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